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www.irf.com 1 12/7/04 hexfet power mosfet v dss r ds(on) max q g 12v 8.5m ? 27nc notes through are on page 9 parameter typ. max. units r jc junction-to-case ??? 1.7 r ja junction-to-ambient (pcb mount)* ??? 40 c/w r ja junction-to-ambient ??? 110 thermal resistance absolute maximum ratings symbol parameter max. units v ds drain-source voltage 12 v v gs gate-to-source voltage 12 v i d @ t c = 25c continuous drain current, v gs @ 4.5v 84 i d @ t c = 100c continuous drain current, v gs @ 4.5v 60 a i dm pulsed drain current 320 p d @t c = 25c maximum power dissipation 88 w p d @t c = 100c maximum power dissipation 44 w linear derating factor 0. 59 mw/c t j , t stg junction and storage temperature range -55 to + 175 c applications benefits ultra-low gate impedance very low r ds(on) fully characterized avalanche voltage and current high frequency 3.3v and 5v input point- of-load synchronous buck converters power management for netcom, computing and portable applications. lead-free d-pak i-pak irlr3802 irlu3802 irlr3802pbf irlu3802pbf

2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. ??? 0.81 1.2 v t j = 25c, i s = 12a, v gs = 0v ??? 0.65 ??? t j = 125c, i s = 12a, v gs = 0v t rr reverse recovery time ??? 52 78 ns t j = 25c, i f = 12a, v r =20v q rr reverse recovery charge ??? 54 81 nc di/dt = 100a/s t rr reverse recovery time ??? 50 75 ns t j = 125c, i f = 12a, v r =20v q rr reverse recovery charge ??? 50 75 nc di/dt = 100a/s s d g diode characteristics 84 320 v sd diode forward voltage parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 12 ??? ??? v v gs = 0v, i d = 250a ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.009 ??? v/c reference to 25c, i d = 1ma ??? 6.5 8.5 v gs = 4.5v, i d = 15a ??? ??? 30 v gs = 2.8v, i d = 12a v gs(th) gate threshold voltage 0.6 ??? 1.9 v v ds = v gs , i d = 250a ? v gs(th) / ? t j gate threshold voltage coefficient ??? -3.2 ??? mv/c ??? ??? 100 a v ds = 9.6v, v gs = 0v ??? ??? 250 v ds = 9.6v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 12v gate-to-source reverse leakage ??? ??? -200 na v gs = -12v g fs forward transconductance 31 ??? ??? s v ds = 6.0v, i d = 12a q g total gate charge ??? 27 41 q gs1 pre-vth gate-source charge ??? 3.6 ??? v ds = 6.0v q gs2 post-vth gate-source charge ??? 2.0 ??? v gs = 5.0v q gd gate-to-drain charge ??? 10 ??? nc i d = 6.0a q godr gate charge overdrive ??? 11 ??? see fig.16 q sw switch charge (q gs2 + q gd ) ??? 12 ??? q oss output charge ??? 28 ??? nc v ds = 10v, v gs = 0v t d(on) turn-on delay time ??? 11 ??? v dd = 6.0v, v gs = 4.5v t r rise time ??? 14 ??? ns i d = 12a t d(off) turn-off delay time ??? 21 ??? clamped inductive load t f fall time ??? 17 ??? c iss input capacitance ??? 2490 ??? v gs = 0v c oss output capacitance ??? 2150 ??? pf v ds = 6.0v c rss reverse transfer capacitance ??? 530 ??? ? = 1.0mhz static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current m ? r ds(on) static drain-to-source on-resistance symbol parameter typ. max. units e as single pulse avalanche energy ??? 300 mj i ar avalanche current ??? 20 a avalanche characteristics

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0. 1 1 10 v ds , drain-to-source voltage (v) 0. 01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.5v 20s pulse width tj = 25c vgs top 10v 4.5v 3.5v 2.5v 2.3v 2.0v 1.8v bottom 1.5v 0. 1 1 10 v ds , drain-to-source voltage (v) 0. 1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.5v 20s pulse width tj = 175c vgs top 10v 4 .5v 3.5v 2.5v 2.3v 2.0v 1.8v bottom 1.5v 1.0 2.0 3.0 4.0 5.0 6.0 v gs , gate-to-source voltage (v) 0 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 5.0v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 84a v gs = 4.5v

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1020304050 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 12v i d = 6.0a 0 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v

www.irf.com 5 fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 1e-006 1e-005 0. 0001 0. 001 0. 01 0. 1 t 1 , rectangular pulse duration (sec) 0. 001 0. 01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) limited by package v gs v ds 90% 10% t d(on) t d(off) t f t r v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t

6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 14. gate charge test circuit fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 13. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 1000 2000 3000 4000 5000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j )

www.irf.com 7 fig 15.

for n-channel hexfet power mosfets ? ? ! ? "# $% p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ? &'!!() ? &%*+ ? !!(,-- ? +.&+ fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

8 www.irf.com

12 in the assembly line "a" ass embled on ww 16, 1999 example: wi t h as s e mb l y t his is an irf r120 lot code 1234 year 9 = 1999 dat e code we e k 16 part number logo int ernat ional rectifier assembly lot code 916a irf u120 34 year 9 = 1999 dat e code or p = de s i gn at e s l e ad- f r e e product (optional) note: "p" in as sembly line pos ition i ndicates "l ead- f r ee" 12 34 we e k 16 a = assembly site code part number irfu120 line a logo lot code assembly international rectifier

www.irf.com 9

assembly example: with assembly this is an irfu120 year 9 = 1999 dat e code line a week 19 in the assembly line "a" as s embled on ww 19, 1999 lot code 5678 part number 56 irf u120 international logo rectifier lot code 919a 78 note: "p" in assembly line position indicates "lead-free" 56 78 assembly lot code rect ifier logo int ernat ional irfu120 part number we e k 19 dat e code year 9 = 1999 a = assembly site code p = de s i gn at e s l e ad- f r e e product (optional)

10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrialmarket. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/04 repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 1.4mh r g = 25 ? , i as = 20a. pulse width 400s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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